BLP20N10L-D Specs and Replacement
Type Designator: BLP20N10L-D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.3 nS
Cossⓘ - Output Capacitance: 256 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-252
BLP20N10L-D substitution
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BLP20N10L-D datasheet
blp20n10l-d.pdf
BLP20N10L MOSFET , 1 Description BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 30.5 A D R 16 m DS(on... See More ⇒
blp20n10l-q.pdf
BLP20N10L MOSFET , 1 Description BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 29.6 A D R 17 m DS(on... See More ⇒
Detailed specifications: BLP12N10G-E, BLP12N10GL-D, BLP12N10GL-Q, BLP12N10G-P, BLP12N10G-Q, BLP12N10G-U, BLP14N08L-D, BLP14N08L-Q, IRLZ44N, BLP20N10L-Q, BLQM15N06L-D, BLS60R036-F, BLS60R036-W, BLS60R150-A, BLS60R150-F, BLS60R150F-A, BLS60R150F-B
Keywords - BLP20N10L-D MOSFET specs
BLP20N10L-D cross reference
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BLP20N10L-D substitution
BLP20N10L-D replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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