All MOSFET. BLP20N10L-D Datasheet

 

BLP20N10L-D MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLP20N10L-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252

 BLP20N10L-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLP20N10L-D Datasheet (PDF)

 ..1. Size:929K  belling
 blp20n10l-d.pdf

BLP20N10L-D BLP20N10L-D

BLP20N10L MOSFET , 1Description BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 30.5 A DR 16 m DS(on

 4.1. Size:1334K  belling
 blp20n10l-q.pdf

BLP20N10L-D BLP20N10L-D

BLP20N10L MOSFET , 1Description BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 29.6 A DR 17 m DS(on

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top