All MOSFET. BLS60R036-F Datasheet

 

BLS60R036-F Datasheet and Replacement


   Type Designator: BLS60R036-F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 9200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-247
 

 BLS60R036-F substitution

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BLS60R036-F Datasheet (PDF)

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 bls60r036-f bls60r036-w.pdf pdf_icon

BLS60R036-F

BLS60R036 Power MOSFET Step-Down Converter 1Description , BLS60R036, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 8.1. Size:632K  belling
 bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf pdf_icon

BLS60R036-F

BLS60R360 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.2. Size:1056K  belling
 bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf pdf_icon

BLS60R036-F

BLS60R380F Power MOSFET Step-Down Converter 1Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

 8.3. Size:863K  belling
 bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf pdf_icon

BLS60R036-F

BLS60R150 Power MOSFET 1Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

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Datasheet: BLP12N10G-P , BLP12N10G-Q , BLP12N10G-U , BLP14N08L-D , BLP14N08L-Q , BLP20N10L-D , BLP20N10L-Q , BLQM15N06L-D , IRFP260N , BLS60R036-W , BLS60R150-A , BLS60R150-F , BLS60R150F-A , BLS60R150F-B , BLS60R150F-I , BLS60R150F-P , BLS60R150F-W .

History: STFI20N65M5 | HSCE2631 | HSCC8204 | BLS60R380F-A | HSCC8211

Keywords - BLS60R036-F MOSFET datasheet

 BLS60R036-F cross reference
 BLS60R036-F equivalent finder
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 BLS60R036-F replacement

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