BLS60R150F-P Datasheet and Replacement
Type Designator: BLS60R150F-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 45 nC
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 103 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-220
BLS60R150F-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS60R150F-P Datasheet (PDF)
bls60r150f-p bls60r150f-a bls60r150f-i bls60r150f-b bls60r150f-w.pdf
BLS60R150F Power MOSFET 1 Description Step-Down Converter BLS60R150F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. KEY CHARACTERISTICS Parameter Value Unit V 650 V DS@Tj.max I 23 A D R 0.13 DS(ON).Typ FEATURES Fast body diode MOSFET Fa
bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf
BLS60R150 Power MOSFET 1 Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6
bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf
BLS60R360 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf
BLS60R380F Power MOSFET Step-Down Converter 1 Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit
Datasheet: BLQM15N06L-D , BLS60R036-F , BLS60R036-W , BLS60R150-A , BLS60R150-F , BLS60R150F-A , BLS60R150F-B , BLS60R150F-I , 2N7000 , BLS60R150F-W , BLS60R150-P , BLS60R150W , BLS60R360-A , BLS60R360-B , BLS60R360-D , BLS60R360-P , BLS60R360-U .
History: BLS70R420-U
Keywords - BLS60R150F-P MOSFET datasheet
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History: BLS70R420-U
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