BLS60R150F-P
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BLS60R150F-P
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 220
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 23
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 45
nC
trⓘ -
Время нарастания: 29
ns
Cossⓘ - Выходная емкость: 103
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15
Ohm
Тип корпуса:
TO-220
Аналог (замена) для BLS60R150F-P
BLS60R150F-P
Datasheet (PDF)
..1. Size:1047K belling
bls60r150f-p bls60r150f-a bls60r150f-i bls60r150f-b bls60r150f-w.pdf 
BLS60R150F Power MOSFET 1Description Step-Down Converter BLS60R150F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. KEY CHARACTERISTICS Parameter Value Unit V 650 V DS@Tj.maxI 23 A DR 0.13 DS(ON).TypFEATURES Fast body diode MOSFET Fa
5.1. Size:863K belling
bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf 
BLS60R150 Power MOSFET 1Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6
8.1. Size:632K belling
bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf 
BLS60R360 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
8.2. Size:1056K belling
bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf 
BLS60R380F Power MOSFET Step-Down Converter 1Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit
8.3. Size:1433K belling
bls60r036-f bls60r036-w.pdf 
BLS60R036 Power MOSFET Step-Down Converter 1Description , BLS60R036, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6
8.4. Size:604K belling
bls60r520-p bls60r520-a bls60r520-u bls60r520-d.pdf 
BLS60R520 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS60R520, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
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