BLS60R150-P Datasheet. Specs and Replacement

Type Designator: BLS60R150-P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 1060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-220

  📄📄 Copy 

BLS60R150-P substitution

- MOSFET ⓘ Cross-Reference Search

 

BLS60R150-P datasheet

 ..1. Size:863K  belling
 bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf pdf_icon

BLS60R150-P

BLS60R150 Power MOSFET 1 Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒

 5.1. Size:1047K  belling
 bls60r150f-p bls60r150f-a bls60r150f-i bls60r150f-b bls60r150f-w.pdf pdf_icon

BLS60R150-P

BLS60R150F Power MOSFET 1 Description Step-Down Converter BLS60R150F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. KEY CHARACTERISTICS Parameter Value Unit V 650 V DS@Tj.max I 23 A D R 0.13 DS(ON).Typ FEATURES Fast body diode MOSFET Fa... See More ⇒

 8.1. Size:632K  belling
 bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf pdf_icon

BLS60R150-P

BLS60R360 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

 8.2. Size:1056K  belling
 bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf pdf_icon

BLS60R150-P

BLS60R380F Power MOSFET Step-Down Converter 1 Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit ... See More ⇒

SHOW MORE

Detailed specifications: BLS60R036-W, BLS60R150-A, BLS60R150-F, BLS60R150F-A, BLS60R150F-B, BLS60R150F-I, BLS60R150F-P, BLS60R150F-W, IRF9540, BLS60R150W, BLS60R360-A, BLS60R360-B, BLS60R360-D, BLS60R360-P, BLS60R360-U, BLS60R380F-A, BLS60R380F-B

Keywords - BLS60R150-P MOSFET specs

 BLS60R150-P cross reference

 BLS60R150-P equivalent finder

 BLS60R150-P pdf lookup

 BLS60R150-P substitution

 BLS60R150-P replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.