BLS60R380F-D Datasheet. Specs and Replacement

Type Designator: BLS60R380F-D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-252

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BLS60R380F-D datasheet

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BLS60R380F-D

BLS60R380F Power MOSFET Step-Down Converter 1 Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit ... See More ⇒

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 bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf pdf_icon

BLS60R380F-D

BLS60R360 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI... See More ⇒

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 bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf pdf_icon

BLS60R380F-D

BLS60R150 Power MOSFET 1 Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒

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 bls60r036-f bls60r036-w.pdf pdf_icon

BLS60R380F-D

BLS60R036 Power MOSFET Step-Down Converter 1 Description , BLS60R036, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒

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Detailed specifications: BLS60R150W, BLS60R360-A, BLS60R360-B, BLS60R360-D, BLS60R360-P, BLS60R360-U, BLS60R380F-A, BLS60R380F-B, IRF1010E, BLS60R380F-P, BLS60R380F-U, BLS60R520-A, BLS60R520-D, BLS60R520-P, BLS60R520-U, BLS65R041F-F, BLS65R041F-W

Keywords - BLS60R380F-D MOSFET specs

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