BLS70R420-B MOSFET. Datasheet pdf. Equivalent
Type Designator: BLS70R420-B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO-263
BLS70R420-B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS70R420-B Datasheet (PDF)
bls70r420-p bls70r420-a bls70r420-u bls70r420-d bls70r420-b.pdf
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