MPGC15R063 Specs and Replacement
Type Designator: MPGC15R063
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 326 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 157 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 2867 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO-263
MPGC15R063 substitution
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MPGC15R063 datasheet
mpgc15r063.pdf
MPGC15R063 FEATURES BV DSS=150V, I D=157A D RDS(on) @ 6.3m (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant G TO-263 S APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) High-Frequency Switching and Synchronous Rectification Device Marking and Package Information Device Package ... See More ⇒
Detailed specifications: BLS70R420-U, BLS70R600-A, BLS70R600-D, BLS70R600-P, BLS70R600-U, BLS70R900-D, AMPCW120R30CV, AMPCW120R40CU, IRFZ24N, MPGC20R170, MPGJ04R017, MPGJ10R7, MPGJ80R040, MPGP06R030H, MPGP10R033, MPGW20R170, MPSA60M082
Keywords - MPGC15R063 MOSFET specs
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