MPGW20R170 Specs and Replacement
Type Designator: MPGW20R170
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 523 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO-247
MPGW20R170 substitution
- MOSFET ⓘ Cross-Reference Search
MPGW20R170 datasheet
mpgw20r170.pdf
MPGW20R170 FEATURES BV DSS=200V, I D=80A RDS(on) @ 17m (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) High-Frequency Switching and Synchronous Rectification Device Marking and Package Information Device Package Marking MPGW20R17... See More ⇒
Detailed specifications: AMPCW120R40CU, MPGC15R063, MPGC20R170, MPGJ04R017, MPGJ10R7, MPGJ80R040, MPGP06R030H, MPGP10R033, STP65NF06, MPSA60M082, MPSW60M082, MPSA60M160, MPSP60M160, MPSH60M160, MPSC60M160, MPSW60M160, MPSA60M240
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
