All MOSFET. MPGW20R170 Datasheet

 

MPGW20R170 Datasheet and Replacement


   Type Designator: MPGW20R170
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 523 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-247
 

 MPGW20R170 substitution

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MPGW20R170 Datasheet (PDF)

 ..1. Size:4179K  cn marching-power
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MPGW20R170

MPGW20R170FEATURESBVDSS=200V, ID=80ARDS(on) @ :17m (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliantAPPLICATIONS Switch Mode Power Supply (SMPS)Uninterruptible Power Supply (UPS) High-Frequency Switching and Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingMPGW20R17

Datasheet: AMPCW120R40CU , MPGC15R063 , MPGC20R170 , MPGJ04R017 , MPGJ10R7 , MPGJ80R040 , MPGP06R030H , MPGP10R033 , IRFZ48N , MPSA60M082 , MPSW60M082 , MPSA60M160 , MPSP60M160 , MPSH60M160 , MPSC60M160 , MPSW60M160 , MPSA60M240 .

History: NVD4C05NT4G | FQP7N20 | AP6679GS-A | BRCS120N10SZC | FTK640P | 2SJ584LS | SIE822DF

Keywords - MPGW20R170 MOSFET datasheet

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