All MOSFET. MPSA65M165B Datasheet

 

MPSA65M165B Datasheet and Replacement


   Type Designator: MPSA65M165B
   Marking Code: MP65M165B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 20.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO-220F
 

 MPSA65M165B substitution

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MPSA65M165B Datasheet (PDF)

 ..1. Size:1120K  cn marching-power
 mpsa65m165b.pdf pdf_icon

MPSA65M165B

MPSA65M165B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D =20.4ARDS(on) @ :0.165 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD Diode DS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (

 6.1. Size:1658K  cn marching-power
 mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf pdf_icon

MPSA65M165B

MPSA65M170,MPSP65M170,MPSC65M170,MPSH65M170,MPSW65M170,MPSY65M170FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.17(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantDSSPin1 : GGPin2 : Driver SourceTO-247TO-220F TO-2

 6.2. Size:1212K  cn marching-power
 mpsa65m1k0b.pdf pdf_icon

MPSA65M165B

MPSA65M1K 0B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID=4.8 ARDS(on) @ :1.0 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl

 6.3. Size:1152K  cn marching-power
 mpsa65m110b.pdf pdf_icon

MPSA65M165B

MPSA65M110B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=29.1ARDS(on) @ :0.11 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UP

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History: MPSA65M1K0B

Keywords - MPSA65M165B MOSFET datasheet

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