MPSA65M165B
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MPSA65M165B
Маркировка: MP65M165B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 34
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 20.4
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 50
nC
trⓘ -
Время нарастания: 23
ns
Cossⓘ - Выходная емкость: 47
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.165
Ohm
Тип корпуса:
TO-220F
Аналог (замена) для MPSA65M165B
MPSA65M165B
Datasheet (PDF)
..1. Size:1120K cn marching-power
mpsa65m165b.pdf 
MPSA65M165B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D =20.4ARDS(on) @ :0.165 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD Diode DS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (
6.1. Size:1658K cn marching-power
mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf 
MPSA65M170,MPSP65M170,MPSC65M170,MPSH65M170,MPSW65M170,MPSY65M170FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.17(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantDSSPin1 : GGPin2 : Driver SourceTO-247TO-220F TO-2
6.2. Size:1212K cn marching-power
mpsa65m1k0b.pdf 
MPSA65M1K 0B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID=4.8 ARDS(on) @ :1.0 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl
6.3. Size:1152K cn marching-power
mpsa65m110b.pdf 
MPSA65M110B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=29.1ARDS(on) @ :0.11 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UP
6.4. Size:2125K cn marching-power
mpsa65m180cfd.pdf 
MPSA65M180CFD650V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack
6.5. Size:1651K cn marching-power
mpsa65m1k6.pdf 
MPSA65M1K6Power MOSFET650V Super-Junction Power MOSFETJunction Power MOSFETFeaturesBVDSS=650 V, ID=3 ARDS(on) @ :1.6 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliantGDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device
6.6. Size:1783K cn marching-power
mpsa65m1k5.pdf 
MPSA65M1K5Power MOSFET650V Super-Junction Power MOSFETJunction Power MOSFETFeaturesBVDSS=650 V, ID=3 ARDS(on) @ :1.5 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliantGDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device
6.7. Size:1117K cn marching-power
mpsa65m130b.pdf 
MPSA65M130B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=25ARDS(on) @ :0.13 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD Diode DS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS)
Другие MOSFET... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
