All MOSFET. FQP24N08 Datasheet

 

FQP24N08 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP24N08

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: TO220

FQP24N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP24N08 Datasheet (PDF)

1.1. fqp24n08.pdf Size:711K _fairchild_semi

FQP24N08
FQP24N08

August 2000 TM QFET QFET QFET QFET FQP24N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 24A, 80V, RDS(on) = 0.06? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 50 pF) This advanced technology has been especially tailo

Datasheet: FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 , IRF5305 , FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 .

 


FQP24N08
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