All MOSFET. FQP24N08 Datasheet

 

FQP24N08 Datasheet and Replacement


   Type Designator: FQP24N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO220

 FQP24N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP24N08 Datasheet (PDF)

 ..1. Size:711K  fairchild semi
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FQP24N08

August 2000 TM QFET QFET QFET QFET FQP24N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 80V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been esp... See More ⇒

Datasheet: FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 , CS150N03A8 , FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 .

History: IRFZ32 | 2P7172A-5

Keywords - FQP24N08 MOSFET datasheet

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