FQP24N08 Datasheet. Specs and Replacement

Type Designator: FQP24N08  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO220

FQP24N08 substitution

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FQP24N08 datasheet

 ..1. Size:711K  fairchild semi
 fqp24n08.pdf pdf_icon

FQP24N08

August 2000 TM QFET QFET QFET QFET FQP24N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 80V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been esp... See More ⇒

Detailed specifications: FQP17P10, FQP19N20, FQPF13N50C, FQP19N20C, FQPF12N60C, FQP20N06, FQP20N06L, FQP22N30, CS150N03A8, FQP27N25, FQP27P06, FQP2N60C, FQP12N60C, FQP2N80, FQP8N60C, FQP2N90, FQP30N06

Keywords - FQP24N08 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.