FQP27P06 Datasheet and Replacement. Cross Reference Search

FQP27P06 Datasheet (PDF)

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May 2001TMQFETFQP27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

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..3. Size:905K onsemi
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FQP27P06P-Channel QFET MOSFET- 60 V, - 27 A, 70 mFeatures - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,DescriptionID = - 13.5 AThis P-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Gate Charge (Typ. 33 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF)MOSFET technology has been

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May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been e

Datasheet: FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 , FQP24N08 , FQP27N25 , 2N7002 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 , FQP30N06L , FQP32N20C .