All MOSFET. FQP27P06 Datasheet

 

FQP27P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP27P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO220

FQP27P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP27P06 Datasheet (PDF)

1.1. fqp27p06.pdf Size:746K _fairchild_semi

FQP27P06
FQP27P06

May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -27A, -60V, RDS(on) = 0.07? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especially tailored to • Fast sw

5.1. fqp27n25.pdf Size:768K _fairchild_semi

FQP27P06
FQP27P06

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 25.5A, 250V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 50 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tai

Datasheet: FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 , FQP24N08 , FQP27N25 , J112 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 , FQP30N06L , FQP32N20C .

 


FQP27P06
  FQP27P06
  FQP27P06
 

social 

LIST

Last Update

MOSFET: IRLIZ44NPBF | IRLIZ44GPBF | IRLIZ34NPBF | IRLIZ34GPBF | IRLIZ24NPBF | IRLIZ14GPBF | IRLIB9343PBF | IRLIB4343 | IRLI640GPBF | IRLI630GPBF | IRLI620GPBF | IRLI540NPBF | IRLI540GPBF | IRLI540G | IRLI530GPBF |