FQP27P06 - аналоги, параметры транзистора - Справочник транзисторов

FQP27P06 даташит

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May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored

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FQP27P06 P-Channel QFET MOSFET - 60 V, - 27 A, 70 m Features - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, Description ID = - 13.5 A This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary Low Gate Charge (Typ. 33 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF) MOSFET technology has been

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May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e

Другие MOSFET... FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 , FQP24N08 , FQP27N25 , AON7506 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 , FQP30N06L , FQP32N20C .