Справочник MOSFET. FQP27P06

 

FQP27P06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQP27P06
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FQP27P06

 

 

FQP27P06 Datasheet (PDF)

 ..1. Size:746K  fairchild semi
 fqp27p06.pdf

FQP27P06 FQP27P06

May 2001TMQFETFQP27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

 ..2. Size:726K  fairchild semi
 fqp27p06 sw82127.pdf

FQP27P06 FQP27P06

May 2001TMQFETFQP27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

 ..3. Size:905K  onsemi
 fqp27p06.pdf

FQP27P06 FQP27P06

FQP27P06P-Channel QFET MOSFET- 60 V, - 27 A, 70 mFeatures - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,DescriptionID = - 13.5 AThis P-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Gate Charge (Typ. 33 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF)MOSFET technology has been

 9.1. Size:768K  fairchild semi
 fqp27n25.pdf

FQP27P06 FQP27P06

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been e

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