MPSD70M600B Datasheet and Replacement
Type Designator: MPSD70M600B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-252
MPSD70M600B substitution
MPSD70M600B Datasheet (PDF)
mpsd70m600b.pdf

MPSD70M600B700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID =7.3 ARDS(on) @ :0.60 (Max) VGS=10V Very Low FOM (RDS(on) X Qg)D Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedS Built-in ESD DiodeGTO-252Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC
mpsd70m910b.pdf

MPSD70M910B700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID =5.2 ARDS(on) @ :0.91 (Max) VGS=10VD Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformityS 100% Avalanche TestedGTO-252 Built-in ESD DiodeApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power
mpsd70m710b.pdf

MPSD70M710B700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID =6.4 ARDS(on) @ :0.71 (Max) VGS=10V Very Low FOM (RDS(on) X Qg)D Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedS Built-in ESD DiodeGTO-252Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC)
Datasheet: MPSC70M290 , MPSA70M300CFD , MPSA80M250B , MPSA80M380B , MPSA80M670B , MPSA80M850B , MPSC60M160CFD , MPSC70M360B , IRF1407 , MPSD70M710B , MPSD70M910B , MPSU70M1K1B , MPSU70M1K5 , MPSW60M043CFD , MPSW60M086CFD , MPSW60M150B , MPSW65M045B .
History: RFP5P12 | IRF820ASPBF | IRFY430CM
Keywords - MPSD70M600B MOSFET datasheet
MPSD70M600B cross reference
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History: RFP5P12 | IRF820ASPBF | IRFY430CM



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