All MOSFET. MPTP50N60N Datasheet

 

MPTP50N60N Datasheet and Replacement


   Type Designator: MPTP50N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-220
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MPTP50N60N Datasheet (PDF)

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MPTP50N60N

MPTP50N60NFEATURES BVDSS=60V, ID=50A RDS(on): 17m(Max)@VGS=10V RDS(on): 20m(Max)@VGS=4.5V100% avalanche tested RoHS compliantTO-220APPLICATIONS Load Switch Power Management Motor Drive ApplicationDevice Marking and Package InformationOrdering code Package MarkingMPTP50N60N TO-220 MPTP50N60NAbsolute Maximum Ratings TC = 25 unless otherw

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History: VBNC1303 | IRFS4010PBF

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