MPVT20N50B Datasheet and Replacement
Type Designator: MPVT20N50B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 221 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-3P
MPVT20N50B Datasheet (PDF)
mpva20n50b mpvp20n50b mpvw20n50b mpvt20n50b.pdf

MPVX20N50B SeriesPower MOSFETMPSW60M041FEATURESAPPLICATIONSl BVDSS: 500V, ID=20A l Switch Mode Power Supply (SMPS)l RDS(on) : 0.3(Max) @VGS=10Vl Uninterruptible Power Supply (UPS)l Very Low FOM (RDS(on) *Qg)l Power Factor Correction (PFC)l Excellent stability and uniformityl AC to DC ConvertersDGSTO-220F TO-220 TO-247TO-3POrdering InformationType NO. Mar
Datasheet: MPTO3N60 , MPTP50N60N , MPVA10N65F , MPVA12N65F , MPVA13N50F , MPVA20N50B , MPVP20N50B , MPVW20N50B , RU6888R , MPVA20N50F , MPVA20N65F , MPVP20N65F , MPVA2N65BK , MPVU2N65BK , MPVD2N65BK , MPVA4N65F , MPVU4N65F .
History: WMN10N65EM | 2SK3537-01MR
Keywords - MPVT20N50B MOSFET datasheet
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History: WMN10N65EM | 2SK3537-01MR



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