All MOSFET. MPVT20N50B Datasheet

 

MPVT20N50B Datasheet and Replacement


   Type Designator: MPVT20N50B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 221 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-3P
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MPVT20N50B Datasheet (PDF)

 ..1. Size:1207K  cn marching-power
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MPVT20N50B

MPVX20N50B SeriesPower MOSFETMPSW60M041FEATURESAPPLICATIONSl BVDSS: 500V, ID=20A l Switch Mode Power Supply (SMPS)l RDS(on) : 0.3(Max) @VGS=10Vl Uninterruptible Power Supply (UPS)l Very Low FOM (RDS(on) *Qg)l Power Factor Correction (PFC)l Excellent stability and uniformityl AC to DC ConvertersDGSTO-220F TO-220 TO-247TO-3POrdering InformationType NO. Mar

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History: AM1433PE | HLML6401 | CJAB25P03 | IRF3315SPBF | IRL520LPBF | CTS03PP055 | AP85T03GH-HF

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