All MOSFET. MPVT20N50B Datasheet

 

MPVT20N50B MOSFET. Datasheet pdf. Equivalent


   Type Designator: MPVT20N50B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 221 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-3P

 MPVT20N50B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MPVT20N50B Datasheet (PDF)

 ..1. Size:1207K  cn marching-power
 mpva20n50b mpvp20n50b mpvw20n50b mpvt20n50b.pdf

MPVT20N50B MPVT20N50B

MPVX20N50B SeriesPower MOSFETMPSW60M041FEATURESAPPLICATIONSl BVDSS: 500V, ID=20A l Switch Mode Power Supply (SMPS)l RDS(on) : 0.3(Max) @VGS=10Vl Uninterruptible Power Supply (UPS)l Very Low FOM (RDS(on) *Qg)l Power Factor Correction (PFC)l Excellent stability and uniformityl AC to DC ConvertersDGSTO-220F TO-220 TO-247TO-3POrdering InformationType NO. Mar

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFH15N80

 

 
Back to Top