MPVU5N50CCFD Datasheet and Replacement
Type Designator: MPVU5N50CCFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 14.5 nC
tr ⓘ - Rise Time: 13.4 nS
Cossⓘ - Output Capacitance: 61 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO-251
MPVU5N50CCFD substitution
MPVU5N50CCFD Datasheet (PDF)
mpvu5n50ccfd mpvd5n50ccfd.pdf

MPVX5N50CCFD SeriesPower MOSFETMPSW60M041FEATURESAPPLICATIONSBVDSS: 500V, ID=5A Power switch circuit of adaptor and chargerRDS(on) : 1.7(Max) @VGS=10VVery Low FOM (RDS(on) *Qg)Excellent stability and uniformityDGTO-252TO-251 SOrdering InformationType NO. Marking Package CodeMPVU5N50CCFD MPVU5N50CCFD TO-251MPVD5N50CCFD MPVD5N50CCFD TO-252Abso
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