FDM20R120AN4G Specs and Replacement

Type Designator: FDM20R120AN4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 428 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 248 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: TO-247-4

FDM20R120AN4G substitution

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FDM20R120AN4G datasheet

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 fdm20r120an4g.pdf pdf_icon

FDM20R120AN4G

FDM20R120AN4G Silicon Carbide Power MOSFET 1200V, 100A, 20m General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features High Blocking Voltag High Frequency Operation Low on-resistance Fast intrinsic diode with low reverse recovery Applicat... See More ⇒

Detailed specifications: MPVU4N65F, MPVD4N65F, MPVA4N70F, MPVU4N70F, MPVD4N70F, MPVA7N65F, MPVU5N50CCFD, MPVD5N50CCFD, AOD4184A, FDM30R650AN4G, FDM40R120AN4G, FDM50R120AN4G, FDM60R65AN4G, FDM80R120AN4G, FDZ65T300D8G, FDZ90T150PG, FIR10N10LG

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