All MOSFET. FDM20R120AN4G Datasheet

 

FDM20R120AN4G Datasheet and Replacement


   Type Designator: FDM20R120AN4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 428 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 248 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO-247-4
 

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FDM20R120AN4G Datasheet (PDF)

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FDM20R120AN4G

FDM20R120AN4GSilicon Carbide Power MOSFET 1200V, 100A, 20mGeneral DescriptionThis product family offers state of the art performance. It is designed for high frequency applications here highefficiency and high reliability are required.Features High Blocking Voltag High Frequency Operation Low on-resistance Fast intrinsic diode with low reverserecoveryApplicat

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History: FDM30R650AN4G

Keywords - FDM20R120AN4G MOSFET datasheet

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