All MOSFET. FQP30N06L Datasheet

 

FQP30N06L Datasheet and Replacement


   Type Designator: FQP30N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO220
 

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FQP30N06L Datasheet (PDF)

 ..1. Size:623K  fairchild semi
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FQP30N06L

May 2001TMQFETFQP30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially tailo

 ..2. Size:1135K  cn vbsemi
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FQP30N06L

FQP30N06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

 6.1. Size:660K  fairchild semi
fqp30n06.pdf pdf_icon

FQP30N06L

TMQFETFQP30N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been especially tailored to Fast s

Datasheet: FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 , STF13NM60N , FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 , FQP3N30 , FQP3N60C .

Keywords - FQP30N06L MOSFET datasheet

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