FQP30N06L Datasheet. Specs and Replacement
Type Designator: FQP30N06L 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO220
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FQP30N06L substitution
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FQP30N06L datasheet
fqp30n06l.pdf
May 2001 TM QFET FQP30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially tailo... See More ⇒
fqp30n06l.pdf
FQP30N06L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di... See More ⇒
fqp30n06.pdf
TM QFET FQP30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been especially tailored to Fast s... See More ⇒
Detailed specifications: FQP27N25, FQP27P06, FQP2N60C, FQP12N60C, FQP2N80, FQP8N60C, FQP2N90, FQP30N06, IRFP450, FQP32N20C, FQB6N40C, FQP33N10, FQB8N90CTM, FQP34N20, FCPF11N60, FQP3N30, FQP3N60C
Keywords - FQP30N06L MOSFET specs
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History: H5N5005PL | JMSH0401ATL | STD9NM50N-1 | 2SJ146 | DHS020N88E | APT5040KFLLG | BUK9610-55A
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