FIR120N08PG MOSFET. Datasheet pdf. Equivalent
Type Designator: FIR120N08PG
Marking Code: FIR120N08P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 65.7 nC
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 546 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-220AB
FIR120N08PG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FIR120N08PG Datasheet (PDF)
fir120n08pg.pdf
FIR120N08PG120AN - CHANNEL MOSFETPIN Connection TO-220ABProduct SummaryTO-220VDS 80VRDS(on)@VGS=10V 4.9mI 120ADSchematic diagram D Features Uses advanced SGT technologyG Extremely low on-resistance RDS(on) Excellent gate charge x RDS(on) product(FOM)S Application Motor DrivesMarking Diagram SR (Synchronous rectification) DC/DC conv
fir120n055pg.pdf
FIR120N055PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =120A RDS(ON)
fir12n65fg.pdf
FIR12N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=14.6pF(Typ.) G Low gate charge : Qg=41nC(Typ.) D S Low RDS(on) : RDS(on)=0.65(Max.) D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR12N65FFIR12N65F = Specific Device C
fir12n15lg.pdf
FIR12N15LG150V N-Channel MOSFET-DPIN Connection TO-252(D-PAK)Features: Low Intrinsic Capacitances.D Excellent Switching Characteristics. Extended Safe Operating Area.G Unrivalled Gate Charge :Qg= 15.5nC (Typ.).S BVDSS=150V,ID=12A RDS(on) : 0.29 (Max) @VG=10VgSchematic dia ram 100% Avalanche Tested D G S Marking DiagramYAWWVTY =
fir12n70fg.pdf
FIR12N70FG700V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 44nC (Typ.). BVDSS=700V,ID=12A GDS RDS(on) : 0.75 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Loc
fir12n60fg.pdf
FIR12N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures BVDDS=600V (Min.) Low gate charge: Qg=41nC (Typ.) Low drain-source On resistance: RDS(on)=0.65 (Max.) G D S 100% avalanche tested RoHS compliant device D G S Marking DiagramY = YearA = Assembly LocationWW = Work WeekYAWWFIR12N60F = Specif
fir12n80fg.pdf
FIR12N80FG800V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 45nC (Typ.) BVDSS=800V,ID=12AG D S RDS(on) :1.0 (Max) @VG=10V 100% Avalanche TestedMarking DiagramD G S Y = YearA = Assembly LocationWW = Work Week
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
