FIR120N08PG Specs and Replacement

Type Designator: FIR120N08PG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 546 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO-220AB

FIR120N08PG substitution

- MOSFET ⓘ Cross-Reference Search

 

FIR120N08PG datasheet

 ..1. Size:3231K  first semi
fir120n08pg.pdf pdf_icon

FIR120N08PG

FIR120N08PG 120AN - CHANNEL MOSFET PIN Connection TO-220AB Product Summary TO-220 VDS 80V RDS(on)@VGS=10V 4.9m I 120A D Schematic diagram D Features Uses advanced SGT technology G Extremely low on-resistance RDS(on) Excellent gate charge x RDS(on) product(FOM) S Application Motor Drives Marking Diagram SR (Synchronous rectification) DC/DC conv... See More ⇒

 6.1. Size:3177K  first silicon
fir120n055pg.pdf pdf_icon

FIR120N08PG

FIR120N055PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =120A RDS(ON) ... See More ⇒

 9.1. Size:1752K  first semi
fir12n65fg.pdf pdf_icon

FIR120N08PG

FIR12N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=650V(Min.) Low Crss Crss=14.6pF(Typ.) G Low gate charge Qg=41nC(Typ.) D S Low RDS(on) RDS(on)=0.65 (Max.) D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR12N65F FIR12N65F = Specific Device C... See More ⇒

 9.2. Size:1619K  first semi
fir12n15lg.pdf pdf_icon

FIR120N08PG

FIR12N15LG 150V N-Channel MOSFET-D PIN Connection TO-252(D-PAK) Features Low Intrinsic Capacitances. D Excellent Switching Characteristics. Extended Safe Operating Area. G Unrivalled Gate Charge Qg= 15.5nC (Typ.). S BVDSS=150V,ID=12A RDS(on) 0.29 (Max) @VG=10V g Schematic dia ram 100% Avalanche Tested D G S Marking Diagram YAWWVT Y =... See More ⇒

Detailed specifications: FIR10N50FG, FIR10N70FG, FIR10N80FG, FIR110N10PG, FIR11N40FG, FIR11N90ANG, FIR11NS65AFG, FIR11NS70AFG, IRLZ44N, FIR12N15LG, FIR12N70FG, FIR12N80FG, FIR13N50FG, FIR14N50FG, FIR14N65FG, FIR14NS65AFG, FIR14NS70AFG

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