All MOSFET. FIR120N08PG Datasheet

 

FIR120N08PG Datasheet and Replacement


   Type Designator: FIR120N08PG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 546 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-220AB
 

 FIR120N08PG substitution

   - MOSFET ⓘ Cross-Reference Search

 

FIR120N08PG Datasheet (PDF)

 ..1. Size:3231K  first semi
fir120n08pg.pdf pdf_icon

FIR120N08PG

FIR120N08PG120AN - CHANNEL MOSFETPIN Connection TO-220ABProduct SummaryTO-220VDS 80VRDS(on)@VGS=10V 4.9mI 120ADSchematic diagram D Features Uses advanced SGT technologyG Extremely low on-resistance RDS(on) Excellent gate charge x RDS(on) product(FOM)S Application Motor DrivesMarking Diagram SR (Synchronous rectification) DC/DC conv

 6.1. Size:3177K  first silicon
fir120n055pg.pdf pdf_icon

FIR120N08PG

FIR120N055PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =55V,ID =120A RDS(ON)

 9.1. Size:1752K  first semi
fir12n65fg.pdf pdf_icon

FIR120N08PG

FIR12N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=14.6pF(Typ.) G Low gate charge : Qg=41nC(Typ.) D S Low RDS(on) : RDS(on)=0.65(Max.) D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR12N65FFIR12N65F = Specific Device C

 9.2. Size:1619K  first semi
fir12n15lg.pdf pdf_icon

FIR120N08PG

FIR12N15LG150V N-Channel MOSFET-DPIN Connection TO-252(D-PAK)Features: Low Intrinsic Capacitances.D Excellent Switching Characteristics. Extended Safe Operating Area.G Unrivalled Gate Charge :Qg= 15.5nC (Typ.).S BVDSS=150V,ID=12A RDS(on) : 0.29 (Max) @VG=10VgSchematic dia ram 100% Avalanche Tested D G S Marking DiagramYAWWVTY =

Datasheet: FIR10N50FG , FIR10N70FG , FIR10N80FG , FIR110N10PG , FIR11N40FG , FIR11N90ANG , FIR11NS65AFG , FIR11NS70AFG , IRFP260N , FIR12N15LG , FIR12N70FG , FIR12N80FG , FIR13N50FG , FIR14N50FG , FIR14N65FG , FIR14NS65AFG , FIR14NS70AFG .

History: 2SJ389S | FDS7066N7 | SVGP15110NL5 | BUK9275-100A | DTU09N03 | CES2309 | SM4303PSU

Keywords - FIR120N08PG MOSFET datasheet

 FIR120N08PG cross reference
 FIR120N08PG equivalent finder
 FIR120N08PG lookup
 FIR120N08PG substitution
 FIR120N08PG replacement

 

 
Back to Top

 


 
.