All MOSFET. FIR15N10LG Datasheet

 

FIR15N10LG Datasheet and Replacement


   Type Designator: FIR15N10LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-252
 

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FIR15N10LG Datasheet (PDF)

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FIR15N10LG

FIR15N10LGN-Channel 100V(D-S) MOSFETPIN Connection TO-252General DescriptionThe FIR15N10LG is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as c

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FIR15N10LG

FIR150N06PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

Datasheet: FIR12N70FG , FIR12N80FG , FIR13N50FG , FIR14N50FG , FIR14N65FG , FIR14NS65AFG , FIR14NS70AFG , FIR150N06PG , IRF9540 , FIR16N06DG , FIR16N50FG , FIR18N50FG , FIR18N65FG , FIR19N20LG , FIR20N06LG , FIR20N10LG , FIR20N15LG .

History: ELM32428LA | IRF7862PBF | FQB8N60CFTM | UTT6NP10G-S08-R | SIA537EDJ | APT6035BVFRG | QM2N7002E3K1

Keywords - FIR15N10LG MOSFET datasheet

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