All MOSFET. FIR15N10LG Datasheet

 

FIR15N10LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: FIR15N10LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-252

 FIR15N10LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FIR15N10LG Datasheet (PDF)

 ..1. Size:3526K  first semi
 fir15n10lg.pdf

FIR15N10LG FIR15N10LG

FIR15N10LGN-Channel 100V(D-S) MOSFETPIN Connection TO-252General DescriptionThe FIR15N10LG is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as c

 9.1. Size:4641K  first semi
 fir150n06pg.pdf

FIR15N10LG FIR15N10LG

FIR150N06PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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