FIR15N10LG Specs and Replacement

Type Designator: FIR15N10LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-252

FIR15N10LG substitution

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FIR15N10LG datasheet

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 fir15n10lg.pdf pdf_icon

FIR15N10LG

FIR15N10LG N-Channel 100V(D-S) MOSFET PIN Connection TO-252 General Description The FIR15N10LG is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as c... See More ⇒

 9.1. Size:4641K  first semi
 fir150n06pg.pdf pdf_icon

FIR15N10LG

FIR150N06PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON) ... See More ⇒

Detailed specifications: FIR12N70FG, FIR12N80FG, FIR13N50FG, FIR14N50FG, FIR14N65FG, FIR14NS65AFG, FIR14NS70AFG, FIR150N06PG, 2N7000, FIR16N06DG, FIR16N50FG, FIR18N50FG, FIR18N65FG, FIR19N20LG, FIR20N06LG, FIR20N10LG, FIR20N15LG

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