FIR2N80FG MOSFET Datasheet: N-Ch, 800V, 2A. Full specification with pinout and replacement list

FIR2N80FG Specs and Replacement

Type Designator: FIR2N80FG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.3 Ohm

Package: TO-220F

FIR2N80FG substitution

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FIR2N80FG datasheet

..1. Size:2079K first semi
fir2n80fg.pdf pdf_icon

FIR2N80FG 800V N-Channel MOSFET-T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=12nC (Typ.). BVDSS=800V,ID=2A G RDS(on) 6.3 (Max) @VG=10V D S 100% Avalanche Tested g Schematic dia ram D G S Y = Year A = Assembly Location WW = W... See More ⇒

9.1. Size:1681K first semi
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FIR2N60ALG Advanced N-Ch Power MOSFET PIN Connection TO-252(D-PAK) General Description FIR2N60ALG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan D proprietary F-CellTM structure VDMOS technology. The improved G planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov... See More ⇒

9.2. Size:2194K first semi
fir2n65afg.pdf pdf_icon

FIR2N65AFG Advanced N-Ch Power MOSFET-X PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=6.5nC (Typ.). BVDSS=650V,ID=2A G RDS(on) 4.2 (Typ) @VG=10V DS 100% Avalanche Tested g Schematic dia ram D G S Y = Year A = Assembly Location WW = Wor... See More ⇒

9.3. Size:2012K first semi
fir2n70fg.pdf pdf_icon

FIR2N70FG Advanced N-Ch Power MOSFET-T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=9nC (Typ.). BVDSS=700V,ID=2A RDS(on) 6.3 (Max) @VG=10V G 100% Avalanche Tested D S g Schematic dia ram D G S Marking Diagram Y = Year A = Assem... See More ⇒