FIR2N80FG
MOSFET. Datasheet pdf. Equivalent
Type Designator: FIR2N80FG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.3
Ohm
Package:
TO-220F
FIR2N80FG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FIR2N80FG
Datasheet (PDF)
..1. Size:2079K first semi
fir2n80fg.pdf 
FIR2N80FG800V N-Channel MOSFET-TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=12nC (Typ.). BVDSS=800V,ID=2AG RDS(on) : 6.3 (Max) @VG=10VD S 100% Avalanche Tested gSchematic dia ram D G S Y = YearA = Assembly LocationWW = W
9.1. Size:1681K first semi
fir2n60alg.pdf
FIR2N60ALGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR2N60ALG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan Dproprietary F-CellTM structure VDMOS technology. The improved Gplanar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov
9.2. Size:2194K first semi
fir2n65afg.pdf
FIR2N65AFGAdvanced N-Ch Power MOSFET-XPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=6.5nC (Typ.). BVDSS=650V,ID=2AG RDS(on) : 4.2 (Typ) @VG=10VDS 100% Avalanche TestedgSchematic dia ramDGSY = YearA = Assembly LocationWW = Wor
9.3. Size:2012K first semi
fir2n70fg.pdf
FIR2N70FGAdvanced N-Ch Power MOSFET-TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=9nC (Typ.). BVDSS=700V,ID=2A RDS(on) : 6.3 (Max) @VG=10VG 100% Avalanche TestedD S gSchematic dia ram D G S Marking DiagramY = YearA = Assem
9.4. Size:3992K first semi
fir2n60afg.pdf
FIR2N60AFGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 2 APD (TC=25) 35 WRDS(ON) 4.5 G Features D S Fast Switching gSchematic dia ram Low ON Resistance D Low Gate Charge Low Reverse transfer capacitances G 100% Single Pulse avalanche energy Test S Marking DiagramApplicationsPower switch circuit of adaptor and charger. Y = Year
9.5. Size:2967K first semi
fir2n65abpg.pdf
FIR2N65ABPGFIR2N65ABPG650V N-Channel MOSFET -I PIN Connection TO-251(I-PAK)Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=6.7nC (Typ.).G D S BVDSS=650V,ID=2A RDS(on) : 5.0 (Max) @VG=10VgSchematic dia ram 100% Avalanche TestedD G S Marking DiagramY
Datasheet: WPB4002
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