FIR2N80FG - параметры транзистора MOSFET, его аналоги, datasheet

FIR2N80FG Datasheet (PDF)

..1. Size:2079K first semi
fir2n80fg.pdf pdf_icon

FIR2N80FG800V N-Channel MOSFET-TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=12nC (Typ.). BVDSS=800V,ID=2AG RDS(on) : 6.3 (Max) @VG=10VD S 100% Avalanche Tested gSchematic dia ram D G S Y = YearA = Assembly LocationWW = W

9.1. Size:1681K first semi
fir2n60alg.pdf pdf_icon

FIR2N60ALGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR2N60ALG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan Dproprietary F-CellTM structure VDMOS technology. The improved Gplanar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov

9.2. Size:2194K first semi
fir2n65afg.pdf pdf_icon

FIR2N65AFGAdvanced N-Ch Power MOSFET-XPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=6.5nC (Typ.). BVDSS=650V,ID=2AG RDS(on) : 4.2 (Typ) @VG=10VDS 100% Avalanche TestedgSchematic dia ramDGSY = YearA = Assembly LocationWW = Wor

9.3. Size:2012K first semi
fir2n70fg.pdf pdf_icon

FIR2N70FGAdvanced N-Ch Power MOSFET-TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=9nC (Typ.). BVDSS=700V,ID=2A RDS(on) : 6.3 (Max) @VG=10VG 100% Avalanche TestedD S gSchematic dia ram D G S Marking DiagramY = YearA = Assem