FIR40N15LG
MOSFET. Datasheet pdf. Equivalent
Type Designator: FIR40N15LG
Marking Code: FIR40N15L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
TO-252
FIR40N15LG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FIR40N15LG
Datasheet (PDF)
..1. Size:4219K first semi
fir40n15lg.pdf
FIR40N15LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252DescriptionThe FIR40N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
7.1. Size:2137K first semi
fir40n10lg.pdf
FIR40N10LG100V N-Channel MOSFET TO-252Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 61.7nC (Typ.). BVDSS=100V,ID=40A RDS(on) : 0.032 (Max) @VG=10V 100% Avalanche Tested 1.Gate (G)2.Drain (D)3.Sourse (S)Absolute Maximum Ratings* (Tc=25 Unless otherwise no
8.1. Size:4328K first semi
fir40n20lg.pdf
FIR40N20LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252DescriptionThe FIR40N20LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
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