FIR7NS70ALG Specs and Replacement
Type Designator: FIR7NS70ALG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 27 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-252
FIR7NS70ALG substitution
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FIR7NS70ALG datasheet
fir7ns70afg fir7ns70alg.pdf
FIR7NS70AFG/ALG 7A,700V DP MOS Power Transistor-E PIN Connection TO-220F DESCRIPTION FIR7NS70AFG/ALG is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavi... See More ⇒
fir7ns65afg.pdf
FIR7NS65AFG 7A, 650V DP MOS POWER TRANSISTOR-S PIN Connection TO-220F DESCRIPTION FIR7NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using technology. DP MOS It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, G D S high power density,and superior thermal behavi... See More ⇒
fir7n60fg.pdf
FIR7N60FG Advanced N-Ch Power MOSFET-I General Description PIN Connection TO-220F FIR7N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit... See More ⇒
fir7n65fg.pdf
FIR7N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F General Description FIR7N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior... See More ⇒
Detailed specifications: FIR60N04LG , FIR6N40FG , FIR6N60FG , FIR6N65FG , FIR6N70FG , FIR6N90FG , FIR7NS65AFG , FIR7NS70AFG , 2SK3568 , FIR80N03LG , FIR80N08PG , FIR80N10LG , FIR8N60FG , FIR8N65FG , FIR8N70FG , FIR8N80FG , FIR96N08PG .
Keywords - FIR7NS70ALG MOSFET specs
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