FIR7NS70ALG MOSFET. Datasheet pdf. Equivalent
Type Designator: FIR7NS70ALG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 27 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-252
FIR7NS70ALG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FIR7NS70ALG Datasheet (PDF)
fir7ns70afg fir7ns70alg.pdf
FIR7NS70AFG/ALG7A,700V DP MOS Power Transistor-EPIN Connection TO-220FDESCRIPTION FIR7NS70AFG/ALG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavi
fir7ns65afg.pdf
FIR7NS65AFG7A, 650V DP MOS POWER TRANSISTOR-SPIN Connection TO-220FDESCRIPTION FIR7NS65AFG is an N-channel enhancement mode high voltage power MOSFETsproduced using technology. DP MOS It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, G D S high power density,and superior thermal behavi
fir7n60fg.pdf
FIR7N60FGAdvanced N-Ch Power MOSFET-IGeneral Description PIN Connection TO-220FFIR7N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit
fir7n65fg.pdf
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