FIR7NS70ALG. Аналоги и основные параметры

Наименование производителя: FIR7NS70ALG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 28 ns

Cossⓘ - Выходная емкость: 27 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO-252

Аналог (замена) для FIR7NS70ALG

- подборⓘ MOSFET транзистора по параметрам

 

FIR7NS70ALG даташит

 ..1. Size:2916K  first semi
 fir7ns70afg fir7ns70alg.pdf pdf_icon

FIR7NS70ALG

FIR7NS70AFG/ALG 7A,700V DP MOS Power Transistor-E PIN Connection TO-220F DESCRIPTION FIR7NS70AFG/ALG is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavi

 8.1. Size:2155K  first semi
 fir7ns65afg.pdf pdf_icon

FIR7NS70ALG

FIR7NS65AFG 7A, 650V DP MOS POWER TRANSISTOR-S PIN Connection TO-220F DESCRIPTION FIR7NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using technology. DP MOS It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, G D S high power density,and superior thermal behavi

 9.1. Size:5294K  first semi
 fir7n60fg.pdf pdf_icon

FIR7NS70ALG

FIR7N60FG Advanced N-Ch Power MOSFET-I General Description PIN Connection TO-220F FIR7N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit

 9.2. Size:1832K  first semi
 fir7n65fg.pdf pdf_icon

FIR7NS70ALG

FIR7N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F General Description FIR7N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

ПОКАЗАТЬ ЕЩЁ

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