FIR80N10LG Specs and Replacement
Type Designator: FIR80N10LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.9 nS
Cossⓘ - Output Capacitance: 194.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-252
FIR80N10LG substitution
- MOSFET ⓘ Cross-Reference Search
FIR80N10LG datasheet
fir80n10lg.pdf
FIR80N10LG 100V N-Channel MOSFET TO-252 Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 19.8nC (Typ.). BVDSS=100V,ID=80A RDS(on) 0.035 (Max) @VG=10V 1.Gate (G) 100% Avalanche Tested 2.Drain (D) 3.Sourse (S) Marking Diagram YAWW Y = Year FIR80N10L A = Assembly... See More ⇒
fir80n03lg.pdf
FIR80N03LG 80A,30V N-CHANNEL MOSFET-E PIN Connection TO-252(D-PAK) DESCRIPTION D The is an N-channel enhancement mode power MOS FIR80N03LG field effect transistor which is produced using Silan's LVMOS G technology. The improved process and cell structure have been S especially tailored to minimize on-state resistance, provide superior switching performance. This device is w... See More ⇒
fir80n08pg.pdf
FIR80N08PG N-Channel Enhancement Mode Power Mosfet-D PIN Connection TO-220 Description The FIR80N08PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =80V,ID =80A RDS(ON) ... See More ⇒
Detailed specifications: FIR6N65FG, FIR6N70FG, FIR6N90FG, FIR7NS65AFG, FIR7NS70AFG, FIR7NS70ALG, FIR80N03LG, FIR80N08PG, RFP50N06, FIR8N60FG, FIR8N65FG, FIR8N70FG, FIR8N80FG, FIR96N08PG, FIR9N50FG, FIR9N65LG, FIR9N90FG
Keywords - FIR80N10LG MOSFET specs
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History: FIR8N80FG | STP7401
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