All MOSFET. FIR8N65FG Datasheet

 

FIR8N65FG MOSFET. Datasheet pdf. Equivalent


   Type Designator: FIR8N65FG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220F

 FIR8N65FG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FIR8N65FG Datasheet (PDF)

 ..1. Size:3949K  first semi
 fir8n65fg.pdf

FIR8N65FG FIR8N65FG

FIR8N65FG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=28nC (Typ.). BVDSS=650V,ID=7AG RDS(on) : 1.30 (Max) @VG=10VD S 100% Avalanche TestedgSchematic dia ram D G S Y = YearA = Assembly LocationWW = W

 8.1. Size:2461K  first semi
 fir8n60fg.pdf

FIR8N65FG FIR8N65FG

FIR8N60FG600V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=25.9nC (Typ.). BVDSS=600V,ID=7A RDS(on) : 1.2 (Max) @VG=10VG D S 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly

 9.1. Size:4035K  first semi
 fir8n80fg.pdf

FIR8N65FG FIR8N65FG

FIR8N80FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FFeatures Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 27nC (Typ.) G BVDSS=800V,ID=7.5A D S RDS(on) : 1.9 (Max) @VG=10V gSchematic dia ram D 100% Avalanche Tested G S Marking DiagramY = YearA

 9.2. Size:3128K  first semi
 fir8n70fg.pdf

FIR8N65FG FIR8N65FG

FIR8N70FGPIN Connection TO-220F700V N-Channel MOSFET Features: Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 22nC (Typ.)G BVDSS=700V,ID=8AD S RDS(on) : 1.4 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly Loc

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: NTB35N15

 

 
Back to Top