FQP3N30 PDF and Equivalents Search

 

FQP3N30 PDF Specs and Replacement


   Type Designator: FQP3N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220
 

 FQP3N30 substitution

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FQP3N30 PDF Specs

 ..1. Size:708K  fairchild semi
fqp3n30.pdf pdf_icon

FQP3N30

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been ... See More ⇒

 9.1. Size:810K  fairchild semi
fqp3n80c fqpf3n80c.pdf pdf_icon

FQP3N30

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t... See More ⇒

 9.2. Size:567K  fairchild semi
fqp3n60.pdf pdf_icon

FQP3N30

April 2000 TM QFET QFET QFET QFET FQP3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been es... See More ⇒

 9.3. Size:707K  fairchild semi
fqp3n40.pdf pdf_icon

FQP3N30

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has been... See More ⇒

Detailed specifications: FQP30N06 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 , AO3407 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C .

Keywords - FQP3N30 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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