Справочник MOSFET. FQP3N30

 

FQP3N30 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQP3N30

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 55 W

Предельно допустимое напряжение сток-исток (Uds): 300 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5 V

Максимально допустимый постоянный ток стока (Id): 3.2 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 2.2 Ohm

Тип корпуса: TO220

Аналог (замена) для FQP3N30

 

 

FQP3N30 Datasheet (PDF)

1.1. fqp3n30.pdf Size:708K _fairchild_semi

FQP3N30
FQP3N30

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially ta

5.1. fqp3n40.pdf Size:707K _fairchild_semi

FQP3N30
FQP3N30

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.5A, 400V, RDS(on) = 3.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.2 pF) This advanced technology has been

5.2. fqp3n60c.pdf Size:741K _fairchild_semi

FQP3N30
FQP3N30

January 2006 TM QFET FQP3N60C 600V N-Channel MOSFET Features Description 3A, 600V, RDS(on) = 3.4? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 10.5 nC) stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to Fast switchin

 5.3. fqp3n80.pdf Size:654K _fairchild_semi

FQP3N30
FQP3N30

September 2000 TM QFET FQP3N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology has been especially tailo

5.4. fqp3n50c fqpf3n50c.pdf Size:1269K _fairchild_semi

FQP3N30
FQP3N30

QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- Fast

 5.5. fqp3n60.pdf Size:567K _fairchild_semi

FQP3N30
FQP3N30

April 2000 TM QFET QFET QFET QFET FQP3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been es

5.6. fqp3n25.pdf Size:612K _fairchild_semi

FQP3N30
FQP3N30

November 2000 TM QFET QFET QFET QFET FQP3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.7 pF) This advanced technology has bee

5.7. fqp3n80c fqpf3n80c.pdf Size:810K _fairchild_semi

FQP3N30
FQP3N30

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fast swi

5.8. fqp3n90.pdf Size:689K _fairchild_semi

FQP3N30
FQP3N30

September 2000 TM QFET QFET QFET QFET FQP3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has

5.9. fqp3n50c.pdf Size:1267K _fairchild_semi

FQP3N30
FQP3N30

® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to

Другие MOSFET... FQP30N06 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 , IRFP260N , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C .

 

 
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