DAC014N120Z5 Specs and Replacement

Type Designator: DAC014N120Z5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 135 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO247-4L

DAC014N120Z5 substitution

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DAC014N120Z5 datasheet

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DAC014N120Z5

DAC014N120Z5 Silicon Carbide Enhancement Mode MOSFET Features VDSS 1200V I 135A D(@25 ) RDS(ON) 14m TO-247-4L Benefits Pack... See More ⇒

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DAC014N120Z5

DAC016N120Z2 Silicon Carbide Enhancement Mode MOSFET VDSS 1200V Preliminary Features I 115A D(@25 ) RDS(ON) 16m TO-247-4L B... See More ⇒

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DAC014N120Z5

DAC016N120P2 Silicon Carbide Enhancement Mode MOSFET VDSS 1200V Preliminary Features I 115A D(@25 ) RDS(ON) 16m TO-247-3L Bene... See More ⇒

 9.3. Size:1112K  dacosemi
 dac015n065z2.pdf pdf_icon

DAC014N120Z5

DAC015N065Z2 Silicon Carbide Enhancement Mode MOSFET VDSS 650V Features I 120A D(@25 ) RDS(ON) 15m TO-247-4L Benefits ... See More ⇒

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Detailed specifications: FIR8N60FG, FIR8N65FG, FIR8N70FG, FIR8N80FG, FIR96N08PG, FIR9N50FG, FIR9N65LG, FIR9N90FG, 2N60, DAC015N065Z2, DAC016N120P2, DAC016N120Z2, DAC020N065Z1, DAC021N120Z4, DAC030N120Z1, DAC040N120P2, DAC040N120Z1

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