All MOSFET. DAC016N120Z2 Datasheet

 

DAC016N120Z2 Datasheet and Replacement


   Type Designator: DAC016N120Z2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 556 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 115 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0223 Ohm
   Package: TO247-4L
 

 DAC016N120Z2 substitution

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DAC016N120Z2 Datasheet (PDF)

 ..1. Size:1399K  dacosemi
 dac016n120z2.pdf pdf_icon

DAC016N120Z2

DAC016N120Z2Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 115AD(@25 ) RDS(ON) 16m TO-247-4L B

 4.1. Size:1769K  dacosemi
 dac016n120p2.pdf pdf_icon

DAC016N120Z2

DAC016N120P2Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 115AD(@25 ) RDS(ON) 16m TO-247-3L Bene

 9.1. Size:1112K  dacosemi
 dac015n065z2.pdf pdf_icon

DAC016N120Z2

DAC015N065Z2Silicon Carbide Enhancement Mode MOSFETVDSS 650VFeaturesI 120AD(@25 ) RDS(ON) 15m TO-247-4L Benefits

 9.2. Size:1115K  dacosemi
 dac014n120z5.pdf pdf_icon

DAC016N120Z2

DAC014N120Z5Silicon Carbide Enhancement Mode MOSFETFeaturesVDSS 1200V I 135AD(@25 ) RDS(ON) 14m TO-247-4L Benefits Pack

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Datasheet: FIR8N80FG , FIR96N08PG , FIR9N50FG , FIR9N65LG , FIR9N90FG , DAC014N120Z5 , DAC015N065Z2 , DAC016N120P2 , IRF520 , DAC020N065Z1 , DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 .

History: FIR9N50FG | TPC8203 | AP60WN4K9P | AP3403GH | AM3548C | BL8N50-D | SWP100N10A

Keywords - DAC016N120Z2 MOSFET datasheet

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