DAC020N065Z1 Datasheet and Replacement
Type Designator: DAC020N065Z1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 107 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 359 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO247-4L
DAC020N065Z1 substitution
DAC020N065Z1 Datasheet (PDF)
dac020n065z1.pdf
DAC020N065Z1DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETVDSS 650VFeaturesI 107AD(@25 ) DrainRDS(ON) 20m(Pin1, TAB) TO-247-4L Package Gate
dac021n120z4.pdf
DAC021N120Z4Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 100AD(@25 ) RDS(ON) 20.5m TO-247-4L Applications Package Dimensions E AA2P
Datasheet: FIR96N08PG , FIR9N50FG , FIR9N65LG , FIR9N90FG , DAC014N120Z5 , DAC015N065Z2 , DAC016N120P2 , DAC016N120Z2 , AO3400A , DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 .
History: DH045N04I
Keywords - DAC020N065Z1 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: DH045N04I
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