All MOSFET. DAC020N065Z1 Datasheet

 

DAC020N065Z1 Datasheet and Replacement


   Type Designator: DAC020N065Z1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 107 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 359 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO247-4L
 

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DAC020N065Z1 Datasheet (PDF)

 ..1. Size:474K  dacosemi
 dac020n065z1.pdf pdf_icon

DAC020N065Z1

DAC020N065Z1DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETVDSS 650VFeaturesI 107AD(@25 ) DrainRDS(ON) 20m(Pin1, TAB) TO-247-4L Package Gate

 9.1. Size:784K  dacosemi
 dac021n120z4.pdf pdf_icon

DAC020N065Z1

DAC021N120Z4Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 100AD(@25 ) RDS(ON) 20.5m TO-247-4L Applications Package Dimensions E AA2P

Datasheet: FIR96N08PG , FIR9N50FG , FIR9N65LG , FIR9N90FG , DAC014N120Z5 , DAC015N065Z2 , DAC016N120P2 , DAC016N120Z2 , RU6888R , DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 .

History: AFN8439 | 2SK578 | 2SK1400 | NCE70N900I | GSM6424 | TPCA8008-H | CS5N65A3

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