FQP3N60C Spec and Replacement
Type Designator: FQP3N60C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 3
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4
Ohm
Package:
TO220
FQP3N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP3N60C Specs
..2. Size:1241K onsemi
fqp3n60c.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
7.1. Size:567K fairchild semi
fqp3n60.pdf
April 2000 TM QFET QFET QFET QFET FQP3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been es... See More ⇒
9.1. Size:810K fairchild semi
fqp3n80c fqpf3n80c.pdf
TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t... See More ⇒
9.2. Size:707K fairchild semi
fqp3n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has been... See More ⇒
9.3. Size:708K fairchild semi
fqp3n30.pdf
April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been ... See More ⇒
9.4. Size:612K fairchild semi
fqp3n25.pdf
November 2000 TM QFET QFET QFET QFET FQP3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.7 pF) This advanced technology has bee... See More ⇒
9.5. Size:1269K fairchild semi
fqp3n50c fqpf3n50c.pdf
QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to... See More ⇒
9.6. Size:654K fairchild semi
fqp3n80.pdf
September 2000 TM QFET FQP3N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been especially tailo... See More ⇒
9.7. Size:1267K fairchild semi
fqp3n50c fqpf3n50c.pdf
QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to... See More ⇒
9.8. Size:689K fairchild semi
fqp3n90.pdf
September 2000 TM QFET QFET QFET QFET FQP3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has ... See More ⇒
9.9. Size:883K onsemi
fqp3n80c fqpf3n80c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQP30N06L
, FQP32N20C
, FQB6N40C
, FQP33N10
, FQB8N90CTM
, FQP34N20
, FCPF11N60
, FQP3N30
, 18N50
, FCP11N60
, FQP3N80C
, FQP15P12
, FQP3P20
, FQP3P50
, FQP44N10
, FQB11N40C
, FQP45N15V2
.
Keywords - FQP3N60C MOSFET specs
FQP3N60C cross reference
FQP3N60C equivalent finder
FQP3N60C lookup
FQP3N60C substitution
FQP3N60C replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
