All MOSFET. FQP3N60C Datasheet

 

FQP3N60C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP3N60C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10.5 nC

Maximum Drain-Source On-State Resistance (Rds): 3.4 Ohm

Package: TO220

FQP3N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP3N60C Datasheet (PDF)

1.1. fqp3n60c.pdf Size:741K _fairchild_semi

FQP3N60C
FQP3N60C

January 2006 TM QFET FQP3N60C 600V N-Channel MOSFET Features Description 3A, 600V, RDS(on) = 3.4? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 10.5 nC) stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to Fast switchin

3.1. fqp3n60.pdf Size:567K _fairchild_semi

FQP3N60C
FQP3N60C

April 2000 TM QFET QFET QFET QFET FQP3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been es

 5.1. fqp3n40.pdf Size:707K _fairchild_semi

FQP3N60C
FQP3N60C

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.5A, 400V, RDS(on) = 3.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.2 pF) This advanced technology has been

5.2. fqp3n80.pdf Size:654K _fairchild_semi

FQP3N60C
FQP3N60C

September 2000 TM QFET FQP3N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology has been especially tailo

 5.3. fqp3n50c fqpf3n50c.pdf Size:1269K _fairchild_semi

FQP3N60C
FQP3N60C

QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- Fast

5.4. fqp3n25.pdf Size:612K _fairchild_semi

FQP3N60C
FQP3N60C

November 2000 TM QFET QFET QFET QFET FQP3N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.7 pF) This advanced technology has bee

 5.5. fqp3n30.pdf Size:708K _fairchild_semi

FQP3N60C
FQP3N60C

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially ta

5.6. fqp3n80c fqpf3n80c.pdf Size:810K _fairchild_semi

FQP3N60C
FQP3N60C

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fast swi

5.7. fqp3n90.pdf Size:689K _fairchild_semi

FQP3N60C
FQP3N60C

September 2000 TM QFET QFET QFET QFET FQP3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has

5.8. fqp3n50c.pdf Size:1267K _fairchild_semi

FQP3N60C
FQP3N60C

® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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