DAC040N120P2 Specs and Replacement

Type Designator: DAC040N120P2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO247

DAC040N120P2 substitution

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DAC040N120P2 datasheet

 ..1. Size:1396K  dacosemi
 dac040n120p2.pdf pdf_icon

DAC040N120P2

DAC040N120P2 Silicon Carbide Enhancement Mode MOSFET VDSS 1200V Preliminary Features I 60A D(@25 ) RDS(ON) 40m TO-247-3L Benefits ... See More ⇒

 4.1. Size:492K  dacosemi
 dac040n120z1.pdf pdf_icon

DAC040N120P2

DAC040N120Z1 DACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET VDSS 1200V Features I 62A D(@25 ) RDS(ON) 40m Drain (Pin1, TAB) TO-247-.4L Package ... See More ⇒

 4.2. Size:1556K  dacosemi
 dac040n120z5.pdf pdf_icon

DAC040N120P2

DAC040N120Z5 Silicon Carbide Enhancement Mode MOSFET Features VDSS 1200V Preliminary I 54A D(@25 ) RDS(ON) 40m TO-247-4L Benefits ... See More ⇒

Detailed specifications: FIR9N90FG, DAC014N120Z5, DAC015N065Z2, DAC016N120P2, DAC016N120Z2, DAC020N065Z1, DAC021N120Z4, DAC030N120Z1, IRF1405, DAC040N120Z1, DAC040N120Z5, DAC060N120P1, DACMH120N1200, DACMH160N1200, DACMH200N1200, DACMH40N1200, DACMH80N1200

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs