All MOSFET. DACMH200N1200 Datasheet

 

DACMH200N1200 Datasheet and Replacement


   Type Designator: DACMH200N1200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 980 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: MODULE
 

 DACMH200N1200 substitution

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DACMH200N1200 Datasheet (PDF)

 ..1. Size:555K  dacosemi
 dacmh200n1200.pdf pdf_icon

DACMH200N1200

DACMH200N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 9.1. Size:564K  dacosemi
 dacmh120n1200.pdf pdf_icon

DACMH200N1200

DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 9.2. Size:522K  dacosemi
 dacmh40n1200.pdf pdf_icon

DACMH200N1200

DACMH40N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryFeaturesHB-9434 VDSS = 1200V RDS(ON)

 9.3. Size:527K  dacosemi
 dacmh80n1200.pdf pdf_icon

DACMH200N1200

DACMH80N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

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Datasheet: DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 , IRF9640 , DACMH40N1200 , DACMH80N1200 , DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK , DACMI150N120BZK3 , DACMI180N120BZK , DACMI240N120BZK .

History: 2P986A | SPD02N50C3 | FCB11N60FTM | DH116N08F | 2P986V | DACMH160N1200 | 2SK803

Keywords - DACMH200N1200 MOSFET datasheet

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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