DACMH200N1200 Datasheet and Replacement
Type Designator: DACMH200N1200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 980 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: MODULE
DACMH200N1200 substitution
DACMH200N1200 Datasheet (PDF)
dacmh200n1200.pdf
DACMH200N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
dacmh120n1200.pdf
DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
dacmh40n1200.pdf
DACMH40N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryFeaturesHB-9434 VDSS = 1200V RDS(ON)
dacmh80n1200.pdf
DACMH80N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
Datasheet: DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 , AON7403 , DACMH40N1200 , DACMH80N1200 , DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK , DACMI150N120BZK3 , DACMI180N120BZK , DACMI240N120BZK .
History: ME7423S-G | DMP6110SSD | EM6K7 | APTC60DAM18CTG | ELM56801EA | KI2300 | HUFA75829D3S
Keywords - DACMH200N1200 MOSFET datasheet
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History: ME7423S-G | DMP6110SSD | EM6K7 | APTC60DAM18CTG | ELM56801EA | KI2300 | HUFA75829D3S
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