All MOSFET. DACMH80N1200 Datasheet

 

DACMH80N1200 Datasheet and Replacement


   Type Designator: DACMH80N1200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 184 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: MODULE
 

 DACMH80N1200 substitution

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DACMH80N1200 Datasheet (PDF)

 ..1. Size:527K  dacosemi
 dacmh80n1200.pdf pdf_icon

DACMH80N1200

DACMH80N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 9.1. Size:564K  dacosemi
 dacmh120n1200.pdf pdf_icon

DACMH80N1200

DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 9.2. Size:555K  dacosemi
 dacmh200n1200.pdf pdf_icon

DACMH80N1200

DACMH200N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 9.3. Size:522K  dacosemi
 dacmh40n1200.pdf pdf_icon

DACMH80N1200

DACMH40N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryFeaturesHB-9434 VDSS = 1200V RDS(ON)

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Datasheet: DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 , DACMH200N1200 , DACMH40N1200 , EMB04N03H , DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK , DACMI150N120BZK3 , DACMI180N120BZK , DACMI240N120BZK , DACMI250N120BZK3 , DACMI450N120BZK3 .

History: OSG65R042HF | HM60N04 | OSG60R340FT3F | 2SK1451 | SVG104R0NS | SUP25P10-138 | RQJ0304DQDQS

Keywords - DACMH80N1200 MOSFET datasheet

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