DACMH80N1200 Datasheet and Replacement
Type Designator: DACMH80N1200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 184 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: MODULE
DACMH80N1200 substitution
DACMH80N1200 Datasheet (PDF)
dacmh80n1200.pdf
DACMH80N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
dacmh120n1200.pdf
DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
dacmh200n1200.pdf
DACMH200N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
dacmh40n1200.pdf
DACMH40N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryFeaturesHB-9434 VDSS = 1200V RDS(ON)
Datasheet: DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 , DACMH200N1200 , DACMH40N1200 , HY1906P , DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK , DACMI150N120BZK3 , DACMI180N120BZK , DACMI240N120BZK , DACMI250N120BZK3 , DACMI450N120BZK3 .
History: IXTH12N100Q | DACMH200N1200
Keywords - DACMH80N1200 MOSFET datasheet
DACMH80N1200 cross reference
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History: IXTH12N100Q | DACMH200N1200
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