DADMI040N120Z1B Datasheet and Replacement
Type Designator: DADMI040N120Z1B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1000 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 1390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.322 Ohm
Package: SOT227
DADMI040N120Z1B substitution
DADMI040N120Z1B Datasheet (PDF)
dadmi040n120z1b.pdf
DADMI040N120Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 1200V / 40APreliminary SOT-227FeaturesSG VDSS = 1200V RDS(ON)
dadmi056n090z1b.pdf
DADMI056N090Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 900V / 56ASOT-227PreliminarySFeaturesG VDSS = 900V RDS(ON)
Datasheet: DACMI120N120BZK , DACMI150N120BZK3 , DACMI180N120BZK , DACMI240N120BZK , DACMI250N120BZK3 , DACMI450N120BZK3 , DADMH040N120Z1B , DADMH056N090Z1B , IRFZ44N , DADMI056N090Z1B , DAEMI040N120Z1B , DAEMI056N090Z1B , DAMH160N200 , DAMH220N150 , DAMH220N200 , DAMH280N200 , DAMH300N150 .
History: AP9565BGM-HF | RFW2N06RLE | IXTQ86N20T | CJS9004 | DMG4407SSS | AOD400 | HGA053N06S
Keywords - DADMI040N120Z1B MOSFET datasheet
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DADMI040N120Z1B replacement
History: AP9565BGM-HF | RFW2N06RLE | IXTQ86N20T | CJS9004 | DMG4407SSS | AOD400 | HGA053N06S
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