DAEMI040N120Z1B Datasheet and Replacement
Type Designator: DAEMI040N120Z1B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1000 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 1390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.322 Ohm
Package: SOT227
DAEMI040N120Z1B substitution
DAEMI040N120Z1B Datasheet (PDF)
daemi040n120z1b.pdf
DAEMI040N120Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 1200V / 40APreliminary SOT-227FeaturesSG VDSS = 1200V RDS(ON)
daemi056n090z1b.pdf
DAEMI056N090Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 900V / 56ASOT-227PreliminaryFeaturesSG VDSS = 900V RDS(ON)
Datasheet: DACMI180N120BZK , DACMI240N120BZK , DACMI250N120BZK3 , DACMI450N120BZK3 , DADMH040N120Z1B , DADMH056N090Z1B , DADMI040N120Z1B , DADMI056N090Z1B , IRF740 , DAEMI056N090Z1B , DAMH160N200 , DAMH220N150 , DAMH220N200 , DAMH280N200 , DAMH300N150 , DAMH320N100 , DAMH360N150 .
History: IRFHM8326 | PPMET20V08E | VBMB165R10 | SML100H9 | CSD23381F4 | BRCS020N04RA
Keywords - DAEMI040N120Z1B MOSFET datasheet
DAEMI040N120Z1B cross reference
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DAEMI040N120Z1B substitution
DAEMI040N120Z1B replacement
History: IRFHM8326 | PPMET20V08E | VBMB165R10 | SML100H9 | CSD23381F4 | BRCS020N04RA
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