DAMH220N150 Specs and Replacement

Type Designator: DAMH220N150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 273 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 220 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 831 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm

Package: MODULE

DAMH220N150 substitution

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DAMH220N150 datasheet

 ..1. Size:284K  dacosemi
 damh220n150.pdf pdf_icon

DAMH220N150

DAMH220N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 150V RDS(ON) ... See More ⇒

 6.1. Size:284K  dacosemi
 damh220n200.pdf pdf_icon

DAMH220N150

DAMH220N200 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 200V RDS(ON) ... See More ⇒

 9.1. Size:282K  dacosemi
 damh280n200.pdf pdf_icon

DAMH220N150

DAMH280N200 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary Features HB-9434 VDSS = 200V RDS(ON) ... See More ⇒

Detailed specifications: DACMI450N120BZK3, DADMH040N120Z1B, DADMH056N090Z1B, DADMI040N120Z1B, DADMI056N090Z1B, DAEMI040N120Z1B, DAEMI056N090Z1B, DAMH160N200, IRF540N, DAMH220N200, DAMH280N200, DAMH300N150, DAMH320N100, DAMH360N150, DAMH450N100, DAMH50N500H, DAMH560N100

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