DAMH220N150 MOSFET. Datasheet pdf. Equivalent
Type Designator: DAMH220N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 273 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 220 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 258 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 831 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
Package: MODULE
DAMH220N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DAMH220N150 Datasheet (PDF)
damh220n150.pdf
DAMH220N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 150V RDS(ON)
damh220n200.pdf
DAMH220N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 200V RDS(ON)
damh280n200.pdf
DAMH280N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryFeaturesHB-9434 VDSS = 200V RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SPP11N65C3 | SI1308EDL | FDMS86520L
History: SPP11N65C3 | SI1308EDL | FDMS86520L
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