DAMH300N150 Datasheet and Replacement
Type Designator: DAMH300N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 1246 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: MODULE
DAMH300N150 substitution
DAMH300N150 Datasheet (PDF)
damh300n150.pdf

DAMH300N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 150V RDS(ON)
damh320n100.pdf

DAMH320N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 100V RDS(ON)
damh360n150.pdf

DAMH360N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryFeatures HB-9434 VDSS = 150V RDS(ON)
Datasheet: DADMI040N120Z1B , DADMI056N090Z1B , DAEMI040N120Z1B , DAEMI056N090Z1B , DAMH160N200 , DAMH220N150 , DAMH220N200 , DAMH280N200 , IRFP460 , DAMH320N100 , DAMH360N150 , DAMH450N100 , DAMH50N500H , DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 .
History: IXFH9N80Q
Keywords - DAMH300N150 MOSFET datasheet
DAMH300N150 cross reference
DAMH300N150 equivalent finder
DAMH300N150 lookup
DAMH300N150 substitution
DAMH300N150 replacement
History: IXFH9N80Q



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