All MOSFET. DAMH300N150 Datasheet

 

DAMH300N150 Datasheet and Replacement


   Type Designator: DAMH300N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 1246 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: MODULE
 

 DAMH300N150 substitution

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DAMH300N150 Datasheet (PDF)

 ..1. Size:285K  dacosemi
 damh300n150.pdf pdf_icon

DAMH300N150

DAMH300N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 150V RDS(ON)

 9.1. Size:284K  dacosemi
 damh320n100.pdf pdf_icon

DAMH300N150

DAMH320N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 100V RDS(ON)

 9.2. Size:284K  dacosemi
 damh360n150.pdf pdf_icon

DAMH300N150

DAMH360N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryFeatures HB-9434 VDSS = 150V RDS(ON)

Datasheet: DADMI040N120Z1B , DADMI056N090Z1B , DAEMI040N120Z1B , DAEMI056N090Z1B , DAMH160N200 , DAMH220N150 , DAMH220N200 , DAMH280N200 , IRF640 , DAMH320N100 , DAMH360N150 , DAMH450N100 , DAMH50N500H , DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 .

History: CSD85312Q3E | SI1031R | AFP1433 | HGB195N15S

Keywords - DAMH300N150 MOSFET datasheet

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