DAMH360N150 Specs and Replacement

Type Designator: DAMH360N150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 360 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: MODULE

DAMH360N150 substitution

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DAMH360N150 datasheet

 ..1. Size:284K  dacosemi
 damh360n150.pdf pdf_icon

DAMH360N150

DAMH360N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary Features HB-9434 VDSS = 150V RDS(ON) ... See More ⇒

 9.1. Size:285K  dacosemi
 damh300n150.pdf pdf_icon

DAMH360N150

DAMH300N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 150V RDS(ON) ... See More ⇒

 9.2. Size:284K  dacosemi
 damh320n100.pdf pdf_icon

DAMH360N150

DAMH320N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 100V RDS(ON) ... See More ⇒

Detailed specifications: DAEMI040N120Z1B, DAEMI056N090Z1B, DAMH160N200, DAMH220N150, DAMH220N200, DAMH280N200, DAMH300N150, DAMH320N100, IRF640, DAMH450N100, DAMH50N500H, DAMH560N100, DAMH75N500H, DAMI160N100, DAMI160N200, DAMI220N150, DAMI220N200

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