DAMH50N500H Datasheet and Replacement
Type Designator: DAMH50N500H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 350 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: MODULE
DAMH50N500H substitution
DAMH50N500H Datasheet (PDF)
damh50n500h.pdf
DAMH50N500HDACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement ModePower MOSFET 500V / 50AHB-9434PreliminaryFeatures VDSS = 500V RDS(ON) Typ.110 GS Fully Avalanche Rated Pb Free & RoHS Compliant Isolation Type Package Electrically Isolation base plateApplications Backlighting Power Converters Synchronous Rectifiers Absolute Maxi
damh560n100.pdf
DAMH560N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 100V RDS(ON)
Datasheet: DAMH160N200 , DAMH220N150 , DAMH220N200 , DAMH280N200 , DAMH300N150 , DAMH320N100 , DAMH360N150 , DAMH450N100 , IRFP260N , DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 .
Keywords - DAMH50N500H MOSFET datasheet
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History: SSF3324 | SQJB00EP
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