DAMH50N500H Datasheet and Replacement
Type Designator: DAMH50N500H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 350 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: MODULE
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DAMH50N500H Datasheet (PDF)
damh50n500h.pdf
DAMH50N500HDACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement ModePower MOSFET 500V / 50AHB-9434PreliminaryFeatures VDSS = 500V RDS(ON) Typ.110 GS Fully Avalanche Rated Pb Free & RoHS Compliant Isolation Type Package Electrically Isolation base plateApplications Backlighting Power Converters Synchronous Rectifiers Absolute Maxi
damh560n100.pdf
DAMH560N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 100V RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK4198LS | HM4449 | HP16N10 | IXTU4N60P | OSG60R070HT3ZF | BLF7G21L-160P | HGW130N12S
Keywords - DAMH50N500H MOSFET datasheet
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History: 2SK4198LS | HM4449 | HP16N10 | IXTU4N60P | OSG60R070HT3ZF | BLF7G21L-160P | HGW130N12S
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