DAMI160N100 Datasheet and Replacement
Type Designator: DAMI160N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 712 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SOT227
DAMI160N100 substitution
DAMI160N100 Datasheet (PDF)
dami160n100.pdf
DAMI160N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)
dami160n200.pdf
DAMI160N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryFeaturesSOT-227 VDSS = 200V SG RDS(ON)
Datasheet: DAMH280N200 , DAMH300N150 , DAMH320N100 , DAMH360N150 , DAMH450N100 , DAMH50N500H , DAMH560N100 , DAMH75N500H , 10N60 , DAMI160N200 , DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 .
History: DAMH220N150 | IXFH9N80Q
Keywords - DAMI160N100 MOSFET datasheet
DAMI160N100 cross reference
DAMI160N100 equivalent finder
DAMI160N100 lookup
DAMI160N100 substitution
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History: DAMH220N150 | IXFH9N80Q
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