All MOSFET. DAMI220N200 Datasheet

 

DAMI220N200 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DAMI220N200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 335 nC
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 993 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: SOT227

 DAMI220N200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DAMI220N200 Datasheet (PDF)

 ..1. Size:511K  dacosemi
 dami220n200.pdf

DAMI220N200 DAMI220N200

DAMI220N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 200V G RDS(ON)

 6.1. Size:510K  dacosemi
 dami220n150.pdf

DAMI220N200 DAMI220N200

DAMI220N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminary SOT-227FeaturesS VDSS = 150V G RDS(ON)

 9.1. Size:510K  dacosemi
 dami280n200.pdf

DAMI220N200 DAMI220N200

DAMI280N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 200V G RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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