DAMI220N200 Datasheet. Specs and Replacement

Type Designator: DAMI220N200  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 220 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 993 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: SOT227

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DAMI220N200 datasheet

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 dami220n200.pdf pdf_icon

DAMI220N200

DAMI220N200 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 200V G RDS(ON) ... See More ⇒

 6.1. Size:510K  dacosemi
 dami220n150.pdf pdf_icon

DAMI220N200

DAMI220N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 150V G RDS(ON) ... See More ⇒

 9.1. Size:510K  dacosemi
 dami280n200.pdf pdf_icon

DAMI220N200

DAMI280N200 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 200V G RDS(ON) ... See More ⇒

Detailed specifications: DAMH360N150, DAMH450N100, DAMH50N500H, DAMH560N100, DAMH75N500H, DAMI160N100, DAMI160N200, DAMI220N150, 8205A, DAMI280N200, DAMI300N150, DAMI320N100, DAMI330N60, DAMI360N150, DAMI450N100, DAMI500N60, DAMI560N100

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