DAMI220N200 Specs and Replacement
Type Designator: DAMI220N200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 993 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: SOT227
DAMI220N200 substitution
DAMI220N200 Specs
dami220n200.pdf
DAMI220N200 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 200V G RDS(ON) ... See More ⇒
dami220n150.pdf
DAMI220N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 150V G RDS(ON) ... See More ⇒
dami280n200.pdf
DAMI280N200 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 200V G RDS(ON) ... See More ⇒
Detailed specifications: DAMH360N150 , DAMH450N100 , DAMH50N500H , DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 , IRF3710 , DAMI280N200 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 .
History: 2SJ266 | BUK768R1-100E
Keywords - DAMI220N200 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SJ266 | BUK768R1-100E
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