FQP3P20 PDF and Equivalents Search

 

FQP3P20 Specs and Replacement

Type Designator: FQP3P20

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO220

FQP3P20 substitution

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FQP3P20 datasheet

 ..1. Size:549K  fairchild semi
 fqp3p20.pdf pdf_icon

FQP3P20

April 2000 TM QFET QFET QFET QFET FQP3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.8A, -200V, RDS(on) = 2.7 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has bee... See More ⇒

 9.1. Size:640K  fairchild semi
 fqp3p50.pdf pdf_icon

FQP3P20

August 2000 TM QFET QFET QFET QFET FQP3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.7A, -500V, RDS(on) = 4.9 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has bee... See More ⇒

Detailed specifications: FQB8N90CTM, FQP34N20, FCPF11N60, FQP3N30, FQP3N60C, FCP11N60, FQP3N80C, FQP15P12, STF13NM60N, FQP3P50, FQP44N10, FQB11N40C, FQP45N15V2, FQP46N15, FQP47P06, FQP4N80, IRFU220B

Keywords - FQP3P20 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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