All MOSFET. FQP3P20 Datasheet

 

FQP3P20 Datasheet and Replacement


   Type Designator: FQP3P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO220
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FQP3P20 Datasheet (PDF)

 ..1. Size:549K  fairchild semi
 fqp3p20.pdf pdf_icon

FQP3P20

April 2000TMQFETQFETQFETQFETFQP3P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, RDS(on) = 2.7 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has bee

 9.1. Size:640K  fairchild semi
 fqp3p50.pdf pdf_icon

FQP3P20

August 2000TMQFETQFETQFETQFETFQP3P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.7A, -500V, RDS(on) = 4.9 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has bee

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SSH7N90A | AP60T03GH | TDM3307A | STN1N20 | NDS9407 | SSF5N80A | IRFSL4410PBF

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