All MOSFET. DAMI300N150 Datasheet

 

DAMI300N150 Datasheet and Replacement


   Type Designator: DAMI300N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 300 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 1246 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: SOT227
 

 DAMI300N150 substitution

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DAMI300N150 Datasheet (PDF)

 ..1. Size:510K  dacosemi
 dami300n150.pdf pdf_icon

DAMI300N150

DAMI300N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 150V G RDS(ON)

 9.1. Size:510K  dacosemi
 dami320n100.pdf pdf_icon

DAMI300N150

DAMI320N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)

 9.2. Size:503K  dacosemi
 dami330n60.pdf pdf_icon

DAMI300N150

DAMI330N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)

 9.3. Size:509K  dacosemi
 dami360n150.pdf pdf_icon

DAMI300N150

DAMI360N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesSG VDSS = 150V RDS(ON)

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Datasheet: DAMH50N500H , DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 , DAMI220N200 , DAMI280N200 , IRFB4110 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 , DAMI660N60 , DAMIA1100N100 .

History: FTE08N06G

Keywords - DAMI300N150 MOSFET datasheet

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