All MOSFET. DAMI560N100 Datasheet

 

DAMI560N100 Datasheet and Replacement


   Type Designator: DAMI560N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 560 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 3944 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: SOT227
 

 DAMI560N100 substitution

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DAMI560N100 Datasheet (PDF)

 ..1. Size:966K  dacosemi
 dami560n100.pdf pdf_icon

DAMI560N100

DAMI560N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)

 9.1. Size:504K  dacosemi
 dami500n60.pdf pdf_icon

DAMI560N100

DAMI500N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)

Datasheet: DAMI220N200 , DAMI280N200 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , AON7408 , DAMI660N60 , DAMIA1100N100 , P0165ED , P0165EI , P0260EDA , P0260EIA , P0306BT , P0406AK .

History: IRLZ44PBF

Keywords - DAMI560N100 MOSFET datasheet

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