DAMI560N100 Specs and Replacement
Type Designator: DAMI560N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 560 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 84 nS
Cossⓘ - Output Capacitance: 3944 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
Package: SOT227
DAMI560N100 substitution
- MOSFET ⓘ Cross-Reference Search
DAMI560N100 datasheet
dami560n100.pdf
DAMI560N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET SOT-227 Preliminary Features S G VDSS = 100V RDS(ON) ... See More ⇒
dami500n60.pdf
DAMI500N60 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Features Preliminary SOT-227 VDSS = 60V S G RDS(ON) ... See More ⇒
Detailed specifications: DAMI220N200 , DAMI280N200 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , IRFP250N , DAMI660N60 , DAMIA1100N100 , P0165ED , P0165EI , P0260EDA , P0260EIA , P0306BT , P0406AK .
Keywords - DAMI560N100 MOSFET specs
DAMI560N100 cross reference
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