All MOSFET. DAMI560N100 Datasheet

 

DAMI560N100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DAMI560N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 560 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1113 nC
   trⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 3944 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: SOT227

 DAMI560N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DAMI560N100 Datasheet (PDF)

 ..1. Size:966K  dacosemi
 dami560n100.pdf

DAMI560N100 DAMI560N100

DAMI560N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)

 9.1. Size:504K  dacosemi
 dami500n60.pdf

DAMI560N100 DAMI560N100

DAMI500N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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