P0306BT MOSFET. Datasheet pdf. Equivalent
Type Designator: P0306BT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 162 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 1162 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO-220
P0306BT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0306BT Datasheet (PDF)
p0306bt.pdf
N-Channel Logic Level Enhancement P0306BT NIKO-SEM Mode Field Effect Transistor TO-220 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 3.4m 60V 162A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 162 Continuous Dr
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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